Identification of Ultraviolet radiation induced Gallic acid and Caffeic acid formation in Palm juice (Borassus flabellifer) by HPLC & Mass Spectra Technique.

Palm juice, a common-cheap-antioxidants rich natural plant juice has been investigated for optimizing the effect of UV-radiation on the antioxidant activity using a DPPH free radical scavenging activity method. In this study separate set of samples of raw palm juice has been treated with 365 and 254 nm UV-lights (UVL) respectively for different exposure time. When exposed for 15 min with 365 nm UVL induces concentration factor of caffeic acid, whereas, 254 nm UVL induces gallic acid accumulation, but overall antioxidant activity was higher for 365 nm UVradiation. Caffeic acid and other polyphenol compounds are increased by 5.5 ± 0.5 % than normal palm juice, observed after irradiation with 365 nm UVL. Even after the exposure of UV irradiation for 15 min, did not affect on peptide bond modification of protein molecules present in palm juice, therefore a green effect of UVL is explored for the effective increase of antioxidant activity.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.

Effect of ion flux on helium retention in helium-irradiated tungsten

Helium retention in irradiated tungsten leads to swelling, pore formation, sample exfoliation and embrittlement with deleterious consequences in many applications. In particular, the use of tungsten in future nuclear fusion plants is proposed due to its good refractory properties. However, serious concerns about tungsten survivability stems from the fact that it must withstand severe irradiation conditions. In magnetic fusion as well as in inertial fusion (particularly with direct drive targets), tungsten components will be exposed to low and high energy ion (helium) irradiation, respectively. A common feature is that the most detrimental situations will take place in pulsed mode, i.e., high flux irradiation. There is increasing evidence on a correlation between a high helium flux and an enhancement of detrimental effects on tungsten. Nevertheless, the nature of these effects is not well understood due to the subtleties imposed by the exact temperature profile evolution, ion energy, pulse duration, existence of impurities and simultaneous irradiation with other species. Physically based Kinetic Monte Carlo is the technique of choice to simulate the evolution of radiation-induced damage inside solids in large temporal and space scales. We have used the recently developed code MMonCa (Modular Monte Carlo simulator), presented in this conference for the first time, to study He retention (and in general defect evolution) in tungsten samples irradiated with high intensity helium pulses. The code simulates the interactions among a large variety of defects and impurities (He and C) during the irradiation stage and the subsequent annealing steps. In addition, it allows us to vary the sample temperature to follow the severe thermo-mechanical effects of the pulses. In this work we will describe the helium kinetics for different irradiation conditions. A competition is established between fast helium cluster migration and trapping at large defects, being the temperature a determinant factor. In fact, high temperatures (induced by the pulses) are responsible for large vacancy cluster formation and subsequent additional trapping with respect to low flux irradiation.

Silica final lens performance in laser fusion facilities: HiPER and LIFE

Nowadays, the projects LIFE (Laser Inertial Fusion Energy) in USA and HiPER (High Power Laser Energy Research) in Europe are the most advanced ones to demonstrate laser fusion energy viability. One of the main points of concern to properly achieve ignition is the performance of the final optics (lenses) under the severe irradiation conditions that take place in fusion facilities. In this paper, we calculate the radiation fluxes and doses as well as the radiation-induced temperature enhancement and colour centre formation in final lenses assuming realistic geometrical configurations for HiPER and LIFE. On these bases, the mechanical stresses generated by the established temperature gradients are evaluated showing that from a mechanical point of view lenses only fulfil specifications if ions resulting from the imploding target are mitigated. The absorption coefficient of the lenses is calculated during reactor startup and steady-state operation. The obtained results reveal the necessity of new solutions to tackle ignition problems during the startup process for HiPER. Finally, we evaluate the effect of temperature gradients on focal length changes and lens surface deformations. In summary, we discuss the capabilities and weak points of silica lenses and propose alternatives to overcome predictable problems

Effect of ion flux on helium retention in helium-irradiated tungsten

Helium retention in irradiated tungsten leads to swelling, pore formation, sample exfoliation and embrittlement with deleterious consequences in many applications. In particular, the use of tungsten in future nuclear fusion plants is proposed due to its good refractory properties. However, serious concerns about tungsten survivability stems from the fact that it must withstand severe irradiation conditions. In magnetic fusion as well as in inertial fusion (particularly with direct drive targets), tungsten components will be exposed to low and high energy ion irradiation (helium), respectively. A common feature is that the most detrimental situations will take place in pulsed mode, i.e., high flux irradiation. There is increasing evidence of a correlation between a high helium flux and an enhancement of detrimental effects on tungsten. Nevertheless, the nature of these effects is not well understood due to the subtleties imposed by the exact temperature profile evolution, ion energy, pulse duration, existence of impurities and simultaneous irradiation with other species. Object Kinetic Monte Carlo is the technique of choice to simulate the evolution of radiation-induced damage inside solids in large temporal and space scales. We have used the recently developed code MMonCa (Modular Monte Carlo simulator), presented at COSIRES 2012 for the first time, to study He retention (and in general defect evolution) in tungsten samples irradiated with high intensity helium pulses. The code simulates the interactions among a large variety of defects and during the irradiation stage and the subsequent annealing steps. The results show that the pulsed mode leads to significantly higher He retention at temperatures higher than 700 K. In this paper we discuss the process of He retention in terms of trap evolution. In addition, we discuss the implications of these findings for inertial fusion.

Fault management techniques for systems with SRAM-based FPGAs

Las Field-Programmable Gate Arrays (FPGAs) SRAM se construyen sobre una memoria de configuración de tecnología RAM Estática (SRAM). Presentan múltiples características que las hacen muy interesantes para diseñar sistemas empotrados complejos. En primer lugar presentan un coste no-recurrente de ingeniería (NRE) bajo, ya que los elementos lógicos y de enrutado están pre-implementados (el diseño de usuario define su conexionado). También, a diferencia de otras tecnologías de FPGA, pueden ser reconfiguradas (incluso en campo) un número ilimitado de veces. Es más, las FPGAs SRAM de Xilinx soportan Reconfiguración Parcial Dinámica (DPR), la cual permite reconfigurar la FPGA sin interrumpir la aplicación. Finalmente, presentan una alta densidad de lógica, una alta capacidad de procesamiento y un rico juego de macro-bloques. Sin embargo, un inconveniente de esta tecnología es su susceptibilidad a la radiación ionizante, la cual aumenta con el grado de integración (geometrías más pequeñas, menores tensiones y mayores frecuencias). Esta es una precupación de primer nivel para aplicaciones en entornos altamente radiativos y con requisitos de alta confiabilidad. Este fenómeno conlleva una degradación a largo plazo y también puede inducir fallos instantáneos, los cuales pueden ser reversibles o producir daños irreversibles. En las FPGAs SRAM, los fallos inducidos por radiación pueden aparecer en en dos capas de arquitectura diferentes, que están físicamente superpuestas en el dado de silicio. La Capa de Aplicación (o A-Layer) contiene el hardware definido por el usuario, y la Capa de Configuración contiene la memoria de configuración y la circuitería de soporte. Los fallos en cualquiera de estas capas pueden hacer fracasar el sistema, lo cual puede ser ás o menos tolerable dependiendo de los requisitos de confiabilidad del sistema. En el caso general, estos fallos deben gestionados de alguna manera. Esta tesis trata sobre la gestión de fallos en FPGAs SRAM a nivel de sistema, en el contexto de sistemas empotrados autónomos y confiables operando en un entorno radiativo. La tesis se centra principalmente en aplicaciones espaciales, pero los mismos principios pueden aplicarse a aplicaciones terrenas. Las principales diferencias entre ambas son el nivel de radiación y la posibilidad de mantenimiento. Las diferentes técnicas para la gestión de fallos en A-Layer y C-Layer son clasificados, y sus implicaciones en la confiabilidad del sistema son analizados. Se proponen varias arquitecturas tanto para Gestores de Fallos de una capa como de doble-capa. Para estos últimos se propone una arquitectura novedosa, flexible y versátil. Gestiona las dos capas concurrentemente de manera coordinada, y permite equilibrar el nivel de redundancia y la confiabilidad. Con el objeto de validar técnicas de gestión de fallos dinámicas, se desarrollan dos diferentes soluciones. La primera es un entorno de simulación para Gestores de Fallos de C-Layer, basado en SystemC como lenguaje de modelado y como simulador basado en eventos. Este entorno y su metodología asociada permite explorar el espacio de diseño del Gestor de Fallos, desacoplando su diseño del desarrollo de la FPGA objetivo. El entorno incluye modelos tanto para la C-Layer de la FPGA como para el Gestor de Fallos, los cuales pueden interactuar a diferentes niveles de abstracción (a nivel de configuration frames y a nivel físico JTAG o SelectMAP). El entorno es configurable, escalable y versátil, e incluye capacidades de inyección de fallos. Los resultados de simulación para algunos escenarios son presentados y comentados. La segunda es una plataforma de validación para Gestores de Fallos de FPGAs Xilinx Virtex. La plataforma hardware aloja tres Módulos de FPGA Xilinx Virtex-4 FX12 y dos Módulos de Unidad de Microcontrolador (MCUs) de 32-bits de propósito general. Los Módulos MCU permiten prototipar Gestores de Fallos de C-Layer y A-Layer basados en software. Cada Módulo FPGA implementa un enlace de A-Layer Ethernet (a través de un switch Ethernet) con uno de los Módulos MCU, y un enlace de C-Layer JTAG con el otro. Además, ambos Módulos MCU intercambian comandos y datos a través de un enlace interno tipo UART. Al igual que para el entorno de simulación, se incluyen capacidades de inyección de fallos. Los resultados de pruebas para algunos escenarios son también presentados y comentados. En resumen, esta tesis cubre el proceso completo desde la descripción de los fallos FPGAs SRAM inducidos por radiación, pasando por la identificación y clasificación de técnicas de gestión de fallos, y por la propuesta de arquitecturas de Gestores de Fallos, para finalmente validarlas por simulación y pruebas. El trabajo futuro está relacionado sobre todo con la implementación de Gestores de Fallos de Sistema endurecidos para radiación. ABSTRACT SRAM-based Field-Programmable Gate Arrays (FPGAs) are built on Static RAM (SRAM) technology configuration memory. They present a number of features that make them very convenient for building complex embedded systems. First of all, they benefit from low Non-Recurrent Engineering (NRE) costs, as the logic and routing elements are pre-implemented (user design defines their connection). Also, as opposed to other FPGA technologies, they can be reconfigured (even in the field) an unlimited number of times. Moreover, Xilinx SRAM-based FPGAs feature Dynamic Partial Reconfiguration (DPR), which allows to partially reconfigure the FPGA without disrupting de application. Finally, they feature a high logic density, high processing capability and a rich set of hard macros. However, one limitation of this technology is its susceptibility to ionizing radiation, which increases with technology scaling (smaller geometries, lower voltages and higher frequencies). This is a first order concern for applications in harsh radiation environments and requiring high dependability. Ionizing radiation leads to long term degradation as well as instantaneous faults, which can in turn be reversible or produce irreversible damage. In SRAM-based FPGAs, radiation-induced faults can appear at two architectural layers, which are physically overlaid on the silicon die. The Application Layer (or A-Layer) contains the user-defined hardware, and the Configuration Layer (or C-Layer) contains the (volatile) configuration memory and its support circuitry. Faults at either layers can imply a system failure, which may be more ore less tolerated depending on the dependability requirements. In the general case, such faults must be managed in some way. This thesis is about managing SRAM-based FPGA faults at system level, in the context of autonomous and dependable embedded systems operating in a radiative environment. The focus is mainly on space applications, but the same principles can be applied to ground applications. The main differences between them are the radiation level and the possibility for maintenance. The different techniques for A-Layer and C-Layer fault management are classified and their implications in system dependability are assessed. Several architectures are proposed, both for single-layer and dual-layer Fault Managers. For the latter, a novel, flexible and versatile architecture is proposed. It manages both layers concurrently in a coordinated way, and allows balancing redundancy level and dependability. For the purpose of validating dynamic fault management techniques, two different solutions are developed. The first one is a simulation framework for C-Layer Fault Managers, based on SystemC as modeling language and event-driven simulator. This framework and its associated methodology allows exploring the Fault Manager design space, decoupling its design from the target FPGA development. The framework includes models for both the FPGA C-Layer and for the Fault Manager, which can interact at different abstraction levels (at configuration frame level and at JTAG or SelectMAP physical level). The framework is configurable, scalable and versatile, and includes fault injection capabilities. Simulation results for some scenarios are presented and discussed. The second one is a validation platform for Xilinx Virtex FPGA Fault Managers. The platform hosts three Xilinx Virtex-4 FX12 FPGA Modules and two general-purpose 32-bit Microcontroller Unit (MCU) Modules. The MCU Modules allow prototyping software-based CLayer and A-Layer Fault Managers. Each FPGA Module implements one A-Layer Ethernet link (through an Ethernet switch) with one of the MCU Modules, and one C-Layer JTAG link with the other. In addition, both MCU Modules exchange commands and data over an internal UART link. Similarly to the simulation framework, fault injection capabilities are implemented. Test results for some scenarios are also presented and discussed. In summary, this thesis covers the whole process from describing the problem of radiationinduced faults in SRAM-based FPGAs, then identifying and classifying fault management techniques, then proposing Fault Manager architectures and finally validating them by simulation and test. The proposed future work is mainly related to the implementation of radiation-hardened System Fault Managers.

Induced radioisotopes in a linac treatment hall

When linacs operate above 8MV an undesirable neutron field is produced whose spectrum has three main components: the direct spectrum due to those neutrons leaking out from the linac head, the scattered spectrum due to neutrons produced in the head that collides with the nuclei in the head losing energy and the third spectrum due to room-return effect. The third category of spectrum has mainly epithermal and thermal neutrons being constant at any location in the treatment hall. These neutrons induce activation in the linac components, the concrete walls and in the patient body. Here the induced radioisotopes have been identified in concrete samples located in the hall and in one of the wedges. The identification has been carried out using a gamma-ray spectrometer.